low noise amplifiers - chip 1 1 - 66 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc518 gaas phemt mmic low noise amplifier, 20 - 32 ghz v01.0907 general description features functional diagram the hmc518 chip is a high dynamic range gaas phemt mmic low noise amplifi er (lna) which covers the 20 to 32 ghz frequency range. the hmc518 provides 15 db of small signal gain, 3 db of noise fi gure and has an output ip3 greater than 23 dbm. the chip can easily be integrated into hy- brid or mcm assemblies due to its small size. all data is tested with the chip in a 50 ohm test fi xture con- nected via 0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). two 0.025 mm (1 mil) diameter bondwires may also be used to make the rfin and rfout connections. noise figure: 3 db gain: 15 db oip3: 23 dbm single supply: +3v @ 65 ma 50 ohm matched input/output die size: 2.27 x 1.32 x 0.1 mm electrical specifi cations, t a = +25 c, vdd 1, 2, 3 = +3v typical applications the hmc518 is ideal for use as a lna or driver ampli- fi e r f o r : ? point-to-point radios ? point-to-multi-point radios & vsat ? test equipment and sensors ? military & space parameter min. typ. max. min. typ. max. units frequency range 20 - 28 28 - 32 ghz gain 12 15 10 13 db gain variation over temperature 0.015 0.025 0.015 0.025 db/ c noise figure 3.0 4.0 3.5 5.5 db input return loss 13 10 db output return loss 15 10 db output power for 1 db compression (p1db) 9 12 9 12 dbm saturated output power (psat) 14 16 dbm output third order intercept (ip3) 23 25 dbm supply current (idd)(vdd = +3v) 65 88 65 88 ma
low noise amplifiers - chip 1 1 - 67 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature noise figure vs. temperature output ip3 vs. temperature -25 -20 -15 -10 -5 0 5 10 15 20 16 18 20 22 24 26 28 30 32 34 s21 s11 s22 gain (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 18 20 22 24 26 28 30 32 34 +25c +85c -55c gain (db) frequency (ghz) -20 -16 -12 -8 -4 0 18 20 22 24 26 28 30 32 34 +25c +85c -55c return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 18 20 22 24 26 28 30 32 34 +25c +85c -55c return loss (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 18 20 22 24 26 28 30 32 34 +25c +85c -55c noise figure (db) frequency (ghz) 5 10 15 20 25 30 35 18 20 22 24 26 28 30 32 34 +25c +85c -55c ip3 (dbm) frequency (ghz) hmc518 v01.0907 gaas phemt mmic low noise amplifier, 20 - 32 ghz
low noise amplifiers - chip 1 1 - 68 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com p1db vs. temperature power compression @ 29 ghz reverse isolation vs. temperature psat vs. temperature gain, noise figure & power vs. supply voltage @ 29 ghz 0 4 8 12 16 20 18 20 22 24 26 28 30 32 34 +25c +85c -55c p1db (dbm) frequency (ghz) 0 4 8 12 16 20 18 20 22 24 26 28 30 32 34 +25c +85c -55c psat (dbm) frequency (ghz) 0 4 8 12 16 20 -20 -15 -10 -5 0 5 pout gain pae pout (dbm), gain (db), pae(%) input power (dbm) -70 -60 -50 -40 -30 -20 -10 0 18 20 22 24 26 28 30 32 34 +25c +85c -55c isolation (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 8 9 10 2.5 3 3.5 gain (db), p1db (dbm) noise figure (db) vdd (v) gain p1db noise figure hmc518 v01.0907 gaas phemt mmic low noise amplifier, 20 - 32 ghz
low noise amplifiers - chip 1 1 - 69 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings drain bias voltage (vdd1, vdd2, vdd3) +5.5 vdc rf input power (rfin)(vdd = +3.0 vdc) +7 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 29 mw/c above 85 c) 2.65 w thermal resistance (channel to die bottom) 34 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c esd sensitivity (hbm) class 1a vdd (vdc) idd (ma) +2.5 61 +3.0 65 +3.5 69 typical supply current vs. vdd note: amplifi er will operate over full voltage ranges shown above. notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. typical bond is .004 square 4. backside metallization: gold 5. bond pad metallization: gold 6. backside metal is ground. 7. connection not required for unlabeled bond pads. electrostatic sensitive device observe handling precautions die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. hmc518 v01.0907 gaas phemt mmic low noise amplifier, 20 - 32 ghz
low noise amplifiers - chip 1 1 - 70 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad descriptions pad number function description interface schematic 1rfin this pad is ac coupled and matched to 50 ohms. 2, 3, 4 vdd1, 2, 3 power supply voltage for the amplifi er. external bypass capacitors of 100 pf and 0.1 f are required. 5rfout this pad is ac coupled and matched to 50 ohms. 6, 7, 8 vgg3, vgg2, vgg1 these pads must be connected to rf/dc ground for proper operation. die bottom gnd die bottom must be connected to rf/dc ground. assembly diagram note: vgg1, vgg2 and vgg3 must be connected to rf/dc ground. hmc518 v01.0907 gaas phemt mmic low noise amplifier, 20 - 32 ghz
low noise amplifiers - chip 1 1 - 71 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). gold ribbon of 0.075 mm (3 mils) width and minimum < 0.31 mm (<12 mils) is recommended. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic 3 mil ribbon bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic 3 mil ribbon bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc518 v01.0907 gaas phemt mmic low noise amplifier, 20 - 32 ghz
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